Abrupt Source Heterostructures with Lateral-Relaxed/Strained Layers for Quasi-Ballistic CMOS Transistors using Lateral Strain Control Technique of Strained Substrates

[C-2-1] Abrupt Source Heterostructures with Lateral-Relaxed/Strained Layers for Quasi-Ballistic CMOS Transistors using Lateral Strain Control Technique of Strained Substrates

T. Mizuno^1,2、M. Hasegawa¹、K. Ikeda³、M. Nojiri⁴、T. Horikawa² (1.Kanagawa Univ.、2.MIRAI-NIRC、3.MIRAI-Toshiba、4.AIST , Japan)