High Temperature Characteristic of Radom Variability of Drain Current in Scaled FETs

T. Tsunomura; A. Kumar; T. Mizutani; A. Nishida; K. Takeuchi; S. Inaba; S. Kamohara; K. Terada; T. Hiramoto; T. Mogami

doi:https://doi.org/10.7567/SSDM.2010.C-4-2

[C-4-2] High Temperature Characteristic of Radom Variability of Drain Current in Scaled FETs

T. Tsunomura¹、A. Kumar²、T. Mizutani²、A. Nishida¹、K. Takeuchi¹、S. Inaba¹、S. Kamohara¹、K. Terada³、T. Hiramoto^1,2、T. Mogami¹ (1.MIRAI-Selete、2.Univ. of Tokyo、3.Hiroshima City Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.C-4-2

2010 International Conference on Solid State Devices and Materials

[C-4-2] High Temperature Characteristic of Radom Variability of Drain Current in Scaled FETs