[C-9-3] Ge FETs Gate Stack Passivation Options and their Scalability to low EOT

F. Bellenger^1,2、B. De Jaeger¹、L. Nyns¹、M. Zahid¹、M. Houssa²、E. Vrancken¹、J. Tseng³、M. Caymax¹、M. Meuris¹、K. De Meyer^1,2、M. Heyns^1,2、T. Hoffmann¹ (1.IMEC、2.KULeuven , Belgium、3.TSMC , Taiwan)

https://doi.org/10.7567/SSDM.2010.C-9-3