[E-9-3] High OFF/ON-resistive NiO ReRAM using Post-Plasma-Oxidation (PPO) process

K. Okamoto¹, M. Tada¹, K. Ito¹, Y. Saito¹, S. Ishida¹, H. Hada¹ (1.NEC Corp. , Japan)

https://doi.org/10.7567/SSDM.2010.E-9-3