[I-1-4] A sub 350°C GaSb pMOSFET with ALD high-k dielectric

A. Nainani¹、T. Irisawa¹、Y. Sun¹、F. Crnogorac¹、K. Saraswat¹ (1.Stanford Univ. , USA)

https://doi.org/10.7567/SSDM.2010.I-1-4