Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET

Y. Iwasaki; Y. Nakamura; J. Kikkawa; A. Sakai; M. Sato; E. Toyoda; H. Isogai; K. Izunome

doi:https://doi.org/10.7567/SSDM.2010.P-1-15

[P-1-15] Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET

Y. Iwasaki¹, Y. Nakamura¹, J. Kikkawa¹, A. Sakai¹, M. Sato², E. Toyoda², H. Isogai², K. Izunome² (1.Osaka Univ., 2.Covalent Silicon Co., Ltd. , Japan)

https://doi.org/10.7567/SSDM.2010.P-1-15

2010 International Conference on Solid State Devices and Materials

[P-1-15] Electrical characterization of wafer-bonded germanium-on-insulator substrates using a four-point-probe pseudo-MOSFET