[P-1-26L] Effect of Valence State of Pr on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure

K. Kato¹、M. Sakashita¹、W. Takeuchi¹、H. Kondo¹、O. Nakatsuka¹、S. Zaima¹ (1.Nagoya Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.P-1-26L