InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al<sub>2</sub>O<sub>3</sub> Gate Stacks

S. Lee; R. Iida; S. H. Kim; M. Yokoyama; N. Taoka; Y. Urabe; T. Yasuda; H. Takagi; H. Ishii; N. Miyata; H. Yamada; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

doi:https://doi.org/10.7567/SSDM.2010.P-3-7

[P-3-7] InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al₂O₃ Gate Stacks

S. Lee¹, R. Iida¹, S. H. Kim¹, M. Yokoyama¹, N. Taoka¹, Y. Urabe², T. Yasuda², H. Takagi², H. Ishii², N. Miyata², H. Yamada³, N. Fukuhara³, M. Hata³, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo, 2.NAIST, 3.Sumitomo Chemical Co., Ltd. , Japan)

https://doi.org/10.7567/SSDM.2010.P-3-7

2010 International Conference on Solid State Devices and Materials

[P-3-7] InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al2O3 Gate Stacks

[P-3-7] InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al₂O₃ Gate Stacks