[B-6-6] Electric and structural characterizations on annealed dinaphthothienothiophene thin-film transistors.

K. Kuribara¹、H. Wang²、N. Uchiyama¹、K. Fukuda¹、T. Yokota¹、T. Sekitani¹、U. Zschieschang³、C. Jaye⁴、D. Fischer⁴、H. Klauk³、T. Yamamoto⁵、K. Takimiya⁵、M. Ikeda⁶、H. Kuwabara⁶、Y. L. Loo²、T. Someya¹ (1.Univ. of Tokyo , Japan、2.Princeton Univ. , U.S.A.、3.Max Planck Inst. for Solid State Res. , Germany、4.National Inst. of Standards and Tech. , U.S.A.、5.Hiroshima Univ.、6.Nippon Kayaku Corp., Ltd. , Japan)

https://doi.org/10.7567/SSDM.2011.B-6-6