Improvement of Phosphorus Activation in In-Situ Phosphorus Doped Silicon Epitaxial Film by Cryogenic Silicon Ion-Implantation and Recrystallization Annealing

H. Itokawa; S. Teehan; J. Li; P. W. DeHaven; N. Berliner; J. J. Demarest; N. R. Klymko; P. Ronsheim; V. Paruchuri

doi:https://doi.org/10.7567/SSDM.2011.E-4-3

[E-4-3] Improvement of Phosphorus Activation in In-Situ Phosphorus Doped Silicon Epitaxial Film by Cryogenic Silicon Ion-Implantation and Recrystallization Annealing

H. Itokawa¹、S. Teehan²、J. Li²、P. W. DeHaven³、N. Berliner²、J. J. Demarest²、N. R. Klymko³、P. Ronsheim³、V. Paruchuri² (1.Toshiba America Electronic Components, Inc.、2.IBM Research at Albany Nanotech Center、3.IBM Semiconductor Research and Development Center , USA)

https://doi.org/10.7567/SSDM.2011.E-4-3

2011 International Conference on Solid State Devices and Materials

[E-4-3] Improvement of Phosphorus Activation in In-Situ Phosphorus Doped Silicon Epitaxial Film by Cryogenic Silicon Ion-Implantation and Recrystallization Annealing