Improvement of Thermal stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge MOSFETs

H. S. Shin; S. K. Oh; M. H. Kang; H. M. Kwon; J. Oh; P. Majhi; R. Jammy; G. W. Lee; H. D. Lee

doi:https://doi.org/10.7567/SSDM.2011.E-5-2

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[E-5-2] Improvement of Thermal stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge MOSFETs

H. S. Shin¹、S. K. Oh¹、M. H. Kang^1,2、H. M. Kwon¹、J. Oh³、P. Majhi³、R. Jammy³、G. W. Lee¹、H. D. Lee¹ (1.Chungnam National Univ.、2.National NanoFab Center , Korea、3.SEMATECH , USA)

https://doi.org/10.7567/SSDM.2011.E-5-2

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