[E-6-2] Dual Gated Germanium Junctionless p-MOSFETs

D. D. Zhao^1,2,3、C. H. Lee^1,2、T. Nishimura^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.CREST-JST , Japan、3.Beijing Normal Univ. , China)

https://doi.org/10.7567/SSDM.2011.E-6-2