Effect of sulfur treatment on HfO<sub>2</sub>/InGaAs MOS interfaces properties

R. Suzuki; S. Lee; S. H. Kim; T. Hoshii; M. Yokoyama; N. Taoka; T. Yasuda; W. Jevasuwan; T. Maeda; O. Ichikawa; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

doi:https://doi.org/10.7567/SSDM.2011.E-8-3

[E-8-3] Effect of sulfur treatment on HfO₂/InGaAs MOS interfaces properties

R. Suzuki¹、S. Lee¹、S. H. Kim¹、T. Hoshii¹、M. Yokoyama¹、N. Taoka¹、T. Yasuda²、W. Jevasuwan²、T. Maeda²、O. Ichikawa³、N. Fukuhara³、M. Hata³、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo、2.AIST、3.Sumitomo Chemical Co., Ltd. , Japan)

https://doi.org/10.7567/SSDM.2011.E-8-3

2011 International Conference on Solid State Devices and Materials

[E-8-3] Effect of sulfur treatment on HfO2/InGaAs MOS interfaces properties

[E-8-3] Effect of sulfur treatment on HfO₂/InGaAs MOS interfaces properties