Effects of Nitrided-InGaAs Interfacial Layers formed by ECR nitrogen plasma on Al<sub>2</sub>O<sub>3</sub>/InGaAs MOS Properties

T. Hoshii; S. Lee; R. Suzuki; N. Taoka; M. Yokoyama; H. Yamada; W. Jevasuwan; M. Hata; T. Yasuda; M. Takenaka; S. Takagi

doi:https://doi.org/10.7567/SSDM.2011.E-8-4

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[E-8-4] Effects of Nitrided-InGaAs Interfacial Layers formed by ECR nitrogen plasma on Al₂O₃/InGaAs MOS Properties

T. Hoshii¹、S. Lee²、R. Suzuki¹、N. Taoka¹、M. Yokoyama¹、H. Yamada²、W. Jevasuwan³、M. Hata²、T. Yasuda³、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo、2.Sumitomo Chemical Co., Ltd.、3.AIST , Japan)

https://doi.org/10.7567/SSDM.2011.E-8-4

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2011 International Conference on Solid State Devices and Materials

[E-8-4] Effects of Nitrided-InGaAs Interfacial Layers formed by ECR nitrogen plasma on Al2O3/InGaAs MOS Properties

[E-8-4] Effects of Nitrided-InGaAs Interfacial Layers formed by ECR nitrogen plasma on Al₂O₃/InGaAs MOS Properties