The Japan Society of Applied Physics

2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[F-6-3] Effect of Interfacial oxide layer on Switching Uniformity of Ge2Sb2Te5 Based Resistive Switching Memory Device

J. Woo1, S. Jung1, S. M. Sadaf1, E. Cha1, H. Hwang1 (1.Gwangju Inst. of Sci. and Tech. , Korea)

https://doi.org/10.7567/SSDM.2011.F-6-3