[F-6-4] Improvement in resistive switching parameters by selecting the SET polarity in IrO_x/TaO_x/WO_x/W structure

A. Prakash¹、S. Maikap¹、C. S. Lai¹、H. Y. Lee²、W. S. Chen²、F. T. Chen²、M. J. Kao²、M. J. Tsai² (1.Chang Gung Univ.、2.ITRI , Taiwan)

https://doi.org/10.7567/SSDM.2011.F-6-4