[F-8-4] Formation free low power resistive switching memory using IrO_x/AlO_x/W cross-point with excellent uniformity and multi level operation

W. Banerjee¹、S. Z. Rahaman¹、S. Maikap¹ (1.Chang Gung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2011.F-8-4