[F-8-5] Highly Uniform and Reliable Switching Properties in NbO_x Based RRAM Devices

S. M. Sadaf¹、X. Liu¹、S. H. Choudhury¹、J. Shin¹、J. Woo¹、M. Siddik¹、H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)

https://doi.org/10.7567/SSDM.2011.F-8-5