[F-9-3] Improving switching characteristics of Cu/Si_xN_y/Pt device with low voltage stress to perform forming

Q. Liu¹、H. B. Lv¹、S. B. Long¹、W. Wang¹、Y. T. Li¹、Y. Wang¹、M. Wang¹、K. W. Zhang¹、H. W. Xie¹、M. Liu¹ (1.Chinese Academy of Sci. , China)

https://doi.org/10.7567/SSDM.2011.F-9-3