[I-1-6] Responsivity Characteristics of InP/InGaAs Heterojunction Phototransistors with Strained InAs/InGaAs Multiquantum Well Absorption Layers

H. Egusa¹、H. Fukano¹、S. Taue¹、T. Sato²、M. Mitsuhara² (1.Okayama Univ.、2.NTT Photonics Labs. , Japan)

https://doi.org/10.7567/SSDM.2011.I-1-6