Room-Temperature Charge Stability Modulated by Quantum Effect in a Sub-5nm Coulomb Blockade Device

S. J. Shin; J. J. Lee; H. J. Kang; J. B. Choi; S. R. E. Yang; Y. Takahashi; D. G. Hasko

doi:https://doi.org/10.7567/SSDM.2011.J-4-2

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[J-4-2] Room-Temperature Charge Stability Modulated by Quantum Effect in a Sub-5nm Coulomb Blockade Device

S. J. Shin¹、J. J. Lee¹、H. J. Kang¹、J. B. Choi¹、S. R. E. Yang²、Y. Takahashi³、D. G. Hasko⁴ (1.Chunbuk National Univ.、2.Korea Univ. , Korea、3.Hokkaido Univ. , Japan、4.Univ. of Cambridge , UK)

https://doi.org/10.7567/SSDM.2011.J-4-2

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