[J-7-4] Effect of Free Carriers on Dopant-induced Surface Potential in SOI-FETs M. Anwar1、R. Nowak1,2、D. Moraru1、R. Jablonski2、T. Mizuno1、M. Tabe1 (1.Shizuoka Univ. , Japan、2.Warsaw Univ. of Tech. , Pol) https://doi.org/10.7567/SSDM.2011.J-7-4