[K-1-4] Sensing Property of Horizontally Aligned Carbon Nanotube Field-Effect Transistor on Quartz Substrate

S. Okuda¹、S. Okamoto¹、Y. Ohno¹、K. Maehashi¹、K. Inoue¹、K. Matsumoto¹ (1.Osaka Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.K-1-4