[N-6-2] Magnetoresistance Effect in Current-Perpendicular-to-Plane Magnetoresistive Devices using Co₂Fe_xMn_1-xSi Heusler Alloy

M. Oogane¹、J. Sato¹、H. Naganuma¹、Y. Ando¹ (1.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.N-6-2