Endurance enhancement of elevated-confined phase change random access memory

H. X. Yang; L. P. Shi; H. K. Lee; R. Zhao; T. C. Chong

doi:https://doi.org/10.7567/SSDM.2011.P-4-11

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-4-11] Endurance enhancement of elevated-confined phase change random access memory

H. X. Yang^1,2, L. P. Shi¹, H. K. Lee¹, R. Zhao¹, T. C. Chong³ (1.A*STAR, 2.National Univ. of Singapore, 3.Singapore Univ. of Tech. and Design , Singapore)

https://doi.org/10.7567/SSDM.2011.P-4-11

▲