The Japan Society of Applied Physics

2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-4-13L] Filament Formation by Cu and Ag Ions for Memory Applications Utilizaing Oxide Dielectrics With Pre-existing Vacated O-atom Sites

Z. Zhang1, E. J. Katz1, D. Zeller2, G. Lucovsky2, L.F. Brillson1 (1.Ohio State Univ., 2.North Carolina State Univ. , USA)

https://doi.org/10.7567/SSDM.2011.P-4-13L