[P-4-14L] Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO₂ based Resistive Switching Memory and its Mechanism for MLC Operation

J. H. Oh^1,2、K. C. Ryoo^1,2、S. Jung¹、Y. Park²、B. G. Park¹ (1.Seoul National Univ.、2.Samsung Electronics Co., Ltd , Korea)

https://doi.org/10.7567/SSDM.2011.P-4-14L