The Japan Society of Applied Physics

[P-4-8] Characterization and improved endurance for HfO2 resistive memory with CMP treated TiN bottom electrode

P. S. Chen1、Y. S. Chen2,3、H. Y. Lee2、T. Y. Wu2、W. H. Liu2、P. Y. Gu2、F. Chen2、M. J. Tsai2 (1.MingShin Univ. Sci. and Eng.、2.Industrial Tech. Res. Inst.、3.National Tsing Hua Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-4-8