Characterization and improved endurance for HfO<sub>2</sub> resistive memory with CMP treated TiN bottom electrode

P. S. Chen; Y. S. Chen; H. Y. Lee; T. Y. Wu; W. H. Liu; P. Y. Gu; F. Chen; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2011.P-4-8

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[P-4-8] Characterization and improved endurance for HfO₂ resistive memory with CMP treated TiN bottom electrode

P. S. Chen¹、Y. S. Chen^2,3、H. Y. Lee²、T. Y. Wu²、W. H. Liu²、P. Y. Gu²、F. Chen²、M. J. Tsai² (1.MingShin Univ. Sci. and Eng.、2.Industrial Tech. Res. Inst.、3.National Tsing Hua Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2011.P-4-8

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2011 International Conference on Solid State Devices and Materials

[P-4-8] Characterization and improved endurance for HfO2 resistive memory with CMP treated TiN bottom electrode

[P-4-8] Characterization and improved endurance for HfO₂ resistive memory with CMP treated TiN bottom electrode