[P-6-11] Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies
U. Honda1, Y. Yamada1, Y. Tokuda1, K. Shiojima2
(1.Aichi Inst. of Tech., 2.Univ. of Fukui , Japan)
https://doi.org/10.7567/SSDM.2011.P-6-11