[P-8-17] Improving Si Doping Efficiency in GaAsN Epilayers by Using (211)B and (311)B GaAs Substrates

X. Han¹、M. Inagaki¹、N. Kojima¹、Y. Ohshita¹、M. Yamaguchi¹ (1.Toyota Technological Inst. , Japan)

https://doi.org/10.7567/SSDM.2011.P-8-17