[E-6-2] Dual Gated Germanium Junctionless p-MOSFETs

D. D. Zhao^1,2,3、C. H. Lee^1,2、T. Nishimura^1,2、K. Nagashio^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.CREST-JST , Japan、3.Beijing Normal Univ. , China)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-3] Control of Surface Roughness on Ge by Wet Chemical Treatments and Its Effects on Electron Mobility in n-FETs

C. H. Lee^1,2、T. Nishimura^1,2、T. Tabata^1,2、M. Yoshida¹、K. Nagashio^1,2、K. Kita^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-4] Strain and Dislocation Structures of Ge_1-xSn_x Heteroepitaxial Layers Grown on Ge(110) Substrates

T. Asano¹、Y. Shimura^1,2、O. Nakatsuka¹、S. Zaima¹ (1.Nagoya Univ.、2.JSPS , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-1] Strained Ge Layers on SiGe(Sn) Buffer Layers Formed by Solid-phase Mixing Method

T. Yamaha¹、K. Mochizuki¹、Y. Shimura^1,2、O. Nakatsuka¹、S. Zaima¹ (1.Nagoya Univ.、2.JSPS , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-2] Evaluation of Anisotropic Strain Relaxation in SSOI Nanostructure by Oil-Immersion Raman Spectroscopy

D. Kosemura¹、M. Tomita¹、K. Usuda²、A. Ogura¹ (1.Meiji Univ.、2.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-3] Channel strain measurements in 32nm-node CMOSFETs

M. Takei¹、H. Hashiguchi¹、T. Yamaguchi¹、D. Kosemura¹、K. Nagata^1,2、A. Ogura¹ (1.Meiji Univ.、2.JSPS , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-4] Characterization of strain and crystallinity in patterned embedded Silicon Germanium structures

S. Mochizuki¹、A. Madan²、A. Pofelski³、A. G. Domenicucci²、P. L. Flaitz²、J. Li²、Y. Y. Wang²、T. Pinto²、C. W. Lai⁴、J. R. Holt²、E. C. T. Harley²、M. W. Stoker²、A. Reznicek²、D. Schepis²、V. Paruchuri² (1.Renesas Electronics、2.IBM、3.STMicroelectronics、4.GLOBALFOUNDRIES Singapore , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-1] Challenges for High-k/III-V CMOS: Interfacial Chemistry, Defects, and Fermi Level Pinning

R. M. Wallace¹ (1.Univ. of Texas , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-2] Guiding Principles for Bonding and Passivation at III-V - oxide Interfaces

J. Robertson¹、L. Lin¹ (1.Cambridge Univ. , UK)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-3] Effect of sulfur treatment on HfO₂/InGaAs MOS interfaces properties

R. Suzuki¹、S. Lee¹、S. H. Kim¹、T. Hoshii¹、M. Yokoyama¹、N. Taoka¹、T. Yasuda²、W. Jevasuwan²、T. Maeda²、O. Ichikawa³、N. Fukuhara³、M. Hata³、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo、2.AIST、3.Sumitomo Chemical Co., Ltd. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード