[F-2-4] Improved effective channel electron velocity in AlGaN/GaN HEMTs with sub-100 nm gate-to-drain distance

K. Kodama¹、Y. Naito¹、H. Tokuda¹、M. Kuzuhara¹ (1.Univ. of Fukui , Japan)

https://doi.org/10.7567/SSDM.2012.F-2-4