[G-5-4L] Electrostatic tuning of charge velocity in a quantum Hall edge channel defined along the perimeter of a gate metal

R. Murata¹、M. Hashisaka¹、K. Muraki²、T. Fujisawa¹ (1.Tokyo Tech.、2.NTT Basic Res. Lab. , Japan)

https://doi.org/10.7567/SSDM.2012.G-5-4L