[PS-15-18L] Preparation of Narrow Band-gap Cu2SnS3 and Cu2Sn(S,Se)3 and Fabrication of Their Films by Printing/High-pressure Sintering Process

T. Nomura¹、T. Maeda¹、T. Wada¹ (1.Ryukoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.PS-15-18L