Low Power and Highly Reliable Gadolinium Oxide Resistive Switching Memory with Remote NH3 Plasma Treatment

Y. R. Ye; J. C. Wnag; J. S. Syu; P.R. Wu; C. S. Lai; C. I. Wu; P. S. Wang

doi:https://doi.org/10.7567/SSDM.2012.PS-4-2

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[PS-4-2] Low Power and Highly Reliable Gadolinium Oxide Resistive Switching Memory with Remote NH3 Plasma Treatment

Y. R. Ye¹、J. C. Wnag¹、J. S. Syu¹、P.R. Wu¹、C. S. Lai¹、C. I. Wu^2,3、P. S. Wang³ (1.Univ.of Chang Gung、2.Univ.of National Taiwan、3.Univ.of National Taiwan , Taiwan)

https://doi.org/10.7567/SSDM.2012.PS-4-2

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