Si:C-S/D Engineering using Cascade C<sub>7</sub>H<sub>x</sub> Implantation Followed by Rapid Solid-Phase Epitaxy and Laser Annealing for nMOSFET with Highly-Strained and Low-Resistive S/D

T. Yamaguchi; Y. Kawasaki; T. Yamashita; Y. Nishida; M. Mizuo; K. Maekawa; M. Fujisawa

doi:https://doi.org/10.7567/SSDM.2013.B-1-3

[B-1-3] Si:C-S/D Engineering using Cascade C₇H_x Implantation Followed by Rapid Solid-Phase Epitaxy and Laser Annealing for nMOSFET with Highly-Strained and Low-Resistive S/D

T. Yamaguchi¹、Y. Kawasaki¹、T. Yamashita¹、Y. Nishida¹、M. Mizuo²、K. Maekawa¹、M. Fujisawa¹ (1.Renesas Electronics Corp.、2.Renesas Semiconductor Engineering Corp. (Japan))

https://doi.org/10.7567/SSDM.2013.B-1-3

2013 International Conference on Solid State Devices and Materials

[B-1-3] Si:C-S/D Engineering using Cascade C7Hx Implantation Followed by Rapid Solid-Phase Epitaxy and Laser Annealing for nMOSFET with Highly-Strained and Low-Resistive S/D

[B-1-3] Si:C-S/D Engineering using Cascade C₇H_x Implantation Followed by Rapid Solid-Phase Epitaxy and Laser Annealing for nMOSFET with Highly-Strained and Low-Resistive S/D