Detection of oxidation-induced compressive stress in Si(100) substrate near the SiO<sub>2</sub>/Si interface with atomic-scale resolution

T. Suwa; K. Nagata; H. Nohira; K. Nakajima; A. Teramoto; A. Ogura; K. Kimura; T. Muro; T. Kinoshita; S. Sugawa; T. Hattori; T. Ohmi

doi:https://doi.org/10.7567/SSDM.2013.B-4-1

[B-4-1] Detection of oxidation-induced compressive stress in Si(100) substrate near the SiO₂/Si interface with atomic-scale resolution

T. Suwa¹、K. Nagata²、H. Nohira³、K. Nakajima⁴、A. Teramoto¹、A. Ogura²、K. Kimura⁴、T. Muro⁵、T. Kinoshita⁵、S. Sugawa¹、T. Hattori¹、T. Ohmi¹ (1.Tohoku Univ.、2.Meiji Univ.、3.Tokyo City Univ.、4.Kyoto Univ.、5.JASRI (Japan))

https://doi.org/10.7567/SSDM.2013.B-4-1

2013 International Conference on Solid State Devices and Materials

[B-4-1] Detection of oxidation-induced compressive stress in Si(100) substrate near the SiO2/Si interface with atomic-scale resolution

[B-4-1] Detection of oxidation-induced compressive stress in Si(100) substrate near the SiO₂/Si interface with atomic-scale resolution