[B-5-3] Interaction of Sn atoms with Defects Introduced by Ion Implantation in Ge Substrate

T. Arahira¹、M. Fukudome¹、N. Taoka¹、W. Takeuchi¹、M. Sakashita¹、O. Nakatsuka¹、S. Zaima¹ (1.Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2013.B-5-3