Reliability Characteristics of MoS<sub>2</sub> FETs

W. Park; Y.G. Lee; J.J Kim; S.K. Lee; C.G. Kang; C. Cho; S.K. Lim; U. Jung; W.K. Hong; B.H. Lee

doi:https://doi.org/10.7567/SSDM.2013.C-6-2

2013 International Conference on Solid State Devices and Materials

2013年9月24日〜 2013年9月27日
Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[C-6-2] Reliability Characteristics of MoS₂ FETs

W. Park¹、Y.G. Lee¹、J.J Kim²、S.K. Lee¹、C.G. Kang¹、C. Cho²、S.K. Lim²、U. Jung¹、W.K. Hong³、B.H. Lee^1,2 (1.Gwangju Inst. of Sci. and Tech.、2.Gwangju Inst. of Sci. and Tech.、3.Korea Basic Sci. Inst. (Korea))

https://doi.org/10.7567/SSDM.2013.C-6-2

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2013 International Conference on Solid State Devices and Materials

[C-6-2] Reliability Characteristics of MoS2 FETs

[C-6-2] Reliability Characteristics of MoS₂ FETs