[D-4-3] Analyzing the Reliability of High-k Dielectric Metal Gate MOSFETs by Using Random Telegraph Signal

D.C. Huang¹、J. Gong²、C.F. Huang¹ (1.National Tsing Hua Univ.、2.Tunghai Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2013.D-4-3