[D-6-3] Influence of work function variation in a metal gate on fluctuation of current-onset voltage for undoped-channel FinFETs

T. Matsukawa¹、Y.X. Liu¹、K. Endo¹、J. Tsukada¹、H. Yamauchi¹、Y. Ishikawa¹、S. O'uchi¹、W. Mizubayashi¹、H. Ota¹、S. Migita¹、Y. Morita¹、M. Masahara¹ (1.AIST (Japan))

https://doi.org/10.7567/SSDM.2013.D-6-3