[E-2-5] Reduction of Charge Noise in Dual-Gate Si/SiGe Quantum Point Contact
J. Kamioka1、T. Kodera1,2,3、T. Obata2、K. Takeda2、W.M. Akhtar2、S. Tarucha2,4、S. Oda1
(1.Tokyo Tech.、2.Univ. of Tokyo、3.PRESTO-JST、4.RIKEN (Japan))
https://doi.org/10.7567/SSDM.2013.E-2-5