[J-1-3] Effect of Gate Insulator Material on Dynamic On-Resistance in GaN MIS-HEMT on 6-inch Si

S. Akiyama¹、Y. Watanabe¹、T. Wakabayashi¹、K. Nukui¹、Y. Kotani¹、T. Ogino¹、T. Hosoda¹、M. Kanamura²、K. Joshin²、T. Kikkawa² (1.Fujitsu Semiconductor Ltd.、2.Fujitsu Labs. (Japan))

https://doi.org/10.7567/SSDM.2013.J-1-3