[J-2-6] A Low Turn-On Voltage and High Breakdown Voltage AlGaN/GaN Dual Metal Schottky Barrier Diode

T.Y. Yang^1,2、T.F. Chang¹、T.Y. Huang²、C.W. Chiu²、H.D. Su²、K.C. Chang²、C.F. Huang¹ (1.National Tsing Hua Univ.、2.Richtek Tech. Corp. (Taiwan))

https://doi.org/10.7567/SSDM.2013.J-2-6