[J-4-2] Effects of p-GaN Capping Layer on the Current Collapse Behaviors in Normally-off p-GaN Gate AlGaN/GaN HFETs

M.K. Eo¹、H.S. Choi¹、S.Y. Jang²、W.S. Kim²、J.H. Shin²、T.H. Jang²、H.I. Kwon¹ (1.Univ. of Chung-Ang、2.System IC R&D Lab., LG Electronics (Korea))

https://doi.org/10.7567/SSDM.2013.J-4-2