[J-6-1] Recent developments in GaN HEMTs and MMICs for high power electronics

P. Waltereit¹、W. Bronner¹、P. Brückner¹、M. Dammann¹、R. Reiner¹、S. Müller¹、J. Kühn¹、M. Mußer¹、R. Quay¹、M. Mikulla¹、O. Ambacher¹ (1.Fraunhofer Inst. for Applied Solid State Physics (Germany))

https://doi.org/10.7567/SSDM.2013.J-6-1