The Japan Society of Applied Physics

[K-1-3] High Speed Waveguide Integrated Lateral P-I-N Ge on Si Photodiode with very Low Dark Current

L. Virot1,2,3, L. Vivien1, J.M. Hartmann2, Y. Bogumilowicz2, J.M. Fedeli2, D. Marris Morini1, E. Cassan1, C. Baudot3, F. Boeuf3 (1.Institut d'Electronique Fondamentale, 2.CEA-Leti, 3.STMicroelectronics (France))

https://doi.org/10.7567/SSDM.2013.K-1-3