[M-5-4] Fabrication of Magnetic Tunnel Junctions with Amorphous CoFeSiB Free Layer for Highly Sensitive Magnetic Sensor Devices

K. Fujiwara¹、D. Kato¹、M. Oogane¹、T. Nishikawa²、H. Naganuma¹、Y. Ando¹ (1.Tohoku Univ.、2.KONICA MINOLTA (Japan))

https://doi.org/10.7567/SSDM.2013.M-5-4