Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO<sub>2</sub>/Ge Stacks on GeO<sub>2</sub> Thickness by X-ray Photoelectron Spectroscopy

X.L. Wang; S.K. Wang; J. Zhang; W.W. Wang; H.G. Liu; J. Yan; C. Zhao; D.P. Chen; T.C. Ye

doi:https://doi.org/10.7567/SSDM.2013.PS-1-8

[PS-1-8] Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO₂/Ge Stacks on GeO₂ Thickness by X-ray Photoelectron Spectroscopy

X.L. Wang¹、S.K. Wang¹、J. Zhang²、W.W. Wang¹、H.G. Liu¹、J. Yan¹、C. Zhao¹、D.P. Chen¹、T.C. Ye¹ (1.Inst. of Microelectronics, Chinese Academy of Sciences、2.North China Univ. of Tech. (China))

https://doi.org/10.7567/SSDM.2013.PS-1-8

2013 International Conference on Solid State Devices and Materials

[PS-1-8] Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO2/Ge Stacks on GeO2 Thickness by X-ray Photoelectron Spectroscopy

[PS-1-8] Dependence of Band Alignment and Interfacial Suboxide GeOx Thickness of Thermal GeO₂/Ge Stacks on GeO₂ Thickness by X-ray Photoelectron Spectroscopy